● ASIC dual IGBT driver
● Suitable for all IGBTs up to 1200V/1700V
● Half-bridge mode select,also two independent single drives
● Short circuit and over current protection by VCEsat monitoring
● Isolation due to nanometer amorphous transformer
● Supply undervoltage protection (<12.5V)
● Error memory
● Error “soft turn-off”
● Driver interlock top/bottom in half-bridge mode
● Dead time adjustable
● Internal isolated DC/DC power supply
● ±25A peak current output
● IGBT gate drive voltage+15V/-9V
● 650ns signal conversion time
● 110ns error signal feedback time
● 400ns narrow pulse inhibit eliminate radio frequency interference
● Max. working frequency 100kHz
● Error chain function, low level active
● Clearance distance from primary side to secondary side is 42mm

2.parameter

PSHI 0423 Pro

Absolute Maximum Ratings(Ta=25℃)

Symbol	Term	Values	Unit
V_{S MAX.}	Max. supply voltage primary	+16	V
I_{S MAX.}	Max. supply current primary	330	mA
P_DC/DC	Total power of DC/DC isolation power output	4	W
V_in	Max. PWM input level V_inA; V_inB	V_S+0.5	V
V_iH	Max. logic signal input voltage (Mode select;reset signal;external error)	V_S+0.5	V
I_OC	Max. logic signal output currect (Open-collector output current)	10	mA
I_outAV	Output average current per channel	80	mA
I_outPEAK	Output peak current per channel	±25	A
V_CES	IGBT collector-emitter voltage	1700	V
V_{isol IO}	Isolation voltage IN-OUT(10 sec.AC)	5000	V
V_{isol AB}	Isolation voltage OUT A-OUT B(10 sec.AC)	2500	V
R_{Gon/off min}	Minimal R_gon/R_goff	1	Ω
Q_out/pulse	Charge per pulse	±10^①	μC
dv/dt	Rate of rise and fall of voltage	75	kV/μs
f_{SW max}	Max. working frequency	100	kHz
T_op	Operating temperature	-40...+85	℃
T_stg.	Storage temperatature	-45...+85	℃

Electrical Characteristics(Ta=25℃)

Symbol	Term	Parameter				Unit
Symbol	Term	Min.	Typ.	Max.	Rec.	Unit
V_S	Supply voltage primary	14.5	15	15.5	15	V
I_S	No-load currect primary f_SW= 0kHz f_SW=20kHz f_SW=100kHz		- 80 100 130			mA
V_IT+	Input high level: 15V level 5V level	-- 12 3.2				V
V_IT_-	Input low level: 15V level 5V level			-- 4.5 1.9		V
R_in	Input resistance		33			kΩ
V_G(on)	Turn-on gate voltage		+15			V
V_G(off)	Turn-off gate voltage		-9			V
t_d(on)IO	IN-OUT turn-on delay time		650			ns
t_d(off)IO	IN-OUT turn-off delay time		600			ns
t_d(err)	Error signal return delay time V_CEerror happen-error signal output		110			ns
t_md	Narrow pulse restrained		400			ns
V_CEstat	Reference voltage for V_CEmonitoring V_CE=1700V V_CE=1200V	2 - -		6.8 - -	- 6.2 5.3	V
V_Level	Logic level (External error input; reset signal; mode select)		+8		+15	V
t_pReset	V_ininput both Low reset time		10			μs
t_TD	Dead time adjusted from factory (half-bridge interlock mode)	.05^②	5			μs
C_PS	Primary to secondary capacitance		12			pf

① This value can be expanded externally (on adapter board )by pins.

② Attention! Pins X_S.6,7 should not connect to power supply V_Sor GND directly,Min.R_TDis 1kΩ and corresponding t_TDis about 0.05μs.

3.application

Typical Applications
● Single or bridge circuit
● Inverter
● Welding machine
● Induction heating
● Converter
● High power UPS
● High power high frequency SMPS

Product Tags:

igbt driver, dual IGBT driver, PSHI 0423 Pro, Max. working frequency 100kHz

3-level HV-IGBT Drivers

IGBT driver

3-level IGBT Driver Core

ALCON capacitance

E series IGBT driver core

IGBT driver circuit

High Power IGBT Driver

SVG / SVC

application Wind power generation、Inverter、Converter、Welding machine &cutting、Induction heating、Trac

HV-IGBT drivers

IGBT driver, thyristor , diode

Parallel Resonant Driver

Plug & Play IGBT Driver

Thyristor Driver

igbt driver, dual IGBT driver, PSHI 0423 Pro, Max. working frequency 100kHz

3.application

igbt converter

scr igbt

realtek ac 97 driver